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20260219_E-202_Krishna.PDF

上传人: 彩旗 编号:1158880 2026-03-02 11页 1.79MB

1、Assuring SoC Power Integrity with Silicon CapacitorsMukund KrishnaSr.Manager,Product MarketingEmpower SemiconductorAgendaImpact of Chiplets on Power IntegritySilicon Capacitors Solve the ChallengePrimer on Silicon CapacitorsCapacitor ParametricsPackaging Options for Silicon CapacitorsApplications2In

2、troduction Trends:oAI/HPC driving exponential density&performanceoDisaggregated IPs Chiplets amplify the#of power domains&connectivity Task:oPI/System engineers tasked with power integrity for all sub-systems:VR(active)+Capacitors(passive)oTypically addressed by network of de-coupling capacitors “fl

3、atten”impedance Challenge:oCommon solution is MLCC:form-factor and characteristics generally suitableoMounting limitations and impedance leads to peaking:High noise/low margin,degraded performance3MLCCs with varying case sizePCBPackage SubstratePWRGNDChipletDie-side Capacitors(stub connections)Chipl

4、etw/die capHigh C+High ESL(100pH)Low C+Med ESL(50-100pH)InterposerThe Challenge for Power Integrity4Standard approach:Network of reducing case-size capacitors on PCBSome embedded MLCCs(2-4 terminal):relatively high ESL Large#of components required to meetimpedance targetStruggle to meet noise(mV p-p

5、)specsNetwork of capacitors required to“Flatten”the PDN all the way to 1 GHz+Equivalent MLCCs required:10 x 10uF Effective Capacitance=80uFEffective ESL=40pHTrace L 800pH18x 100FMLCCPCB725 15x 47FMLCCTrace L 100pH725 Trace L 20pHPackage substrate1m 5FDie200 2m 6.5nHVRM80F150 40pHACTarget Impedance L

6、ow C+MedESL(50pH)PCBPackage SubstratePWRGNDInterposerSilicon Capacitors the Solution Orders of magnitude lower ESL:HigherPerf/Power!oLot fewer components to achieve the PDN goaloLower Noise/eliminate peaking:flat PDN PDN ExampleoOriginal solution:high peaking in 6-20MHz range oEmbedding Silicon Caps

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1. **挑战**:AI/HPC推动芯片密度与性能提升,传统MLCC因高ESL(>100pH)需大量组件(如18×100μF+15×47μF)才能满足阻抗目标,导致噪声高、性能下降。 2. **解决方案**:硅电容器(SiCap)以超低ESL(如EC2006仅40pH)替代MLCC网络,仅需1颗即可实现80×更低ESL,3倍降低阻抗峰值(6-20MHz频段)。 3. **优势**: - 封装灵活(die-side/landside/嵌入式,厚度40-750μm),可贴近芯片安装,优化高频性能。 - 移动SoC案例中,landside安装SiCap使ESL降低6倍,噪声减少50%,延长电池寿命。 4. **结论**:硅电容器以密度、稳定性和先进封装突破传统限制,显著提升电源完整性,支持尖端系统性能。
**硅电容优势?** **如何降低噪声?** **AI/HPC供电挑战?**
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