Session28 Innovations from Outside the (ISSCC) Box.pdf

1、ISSCC 2026SESSION 28Innovations from Outside the(ISSCC)Box28.1:Importance of GaN for 5G and solid-state mm-Wave Circuits of the Future 2026 IEEE International Solid-State Circuits Conference1 of 25Importance of GaN for 5G and Solid-State mm-Wave Circuits of the FutureUmesh K.Mishra,Christopher J.Cly

2、more,Emre Akso,Matthew T.GuidryUniversity of California,Santa BarbaraDept.of Electrical and Computer EngineeringWith funding in part from:Office of Naval Research,Dr.Paul MakiDARPA,Dr.Y.K.Chen,Dr.Tom KaziorONR and ARO DURIP,Dr.Paul Maki,Dr.Jim HarveySemiconductor Research Corporation,JUMP(ComSenTer)

3、28.1:Importance of GaN for 5G and solid-state mm-Wave Circuits of the Future 2026 IEEE International Solid-State Circuits Conference2 of 25OutlineMotivationHigh power,long range wireless linksTransmitter/Receiver DiagramN-polar vs Ga-polar GaNStructureSubstratesGaN for Power amplifiersHigh power Hig

4、h EfficiencyGaN for SwitchesFast switchingHigh IsolationGaN for LNAs Low Noise Figurebias-insensitive linearity28.1:Importance of GaN for 5G and solid-state mm-Wave Circuits of the Future 2026 IEEE International Solid-State Circuits Conference3 of 25UC Santa Barbara ECE Dept.Mishra GroupW-Band(75-11

5、0 GHz)D-Band(110-170 GHz)Ka-Band(26.5-40 GHz)mmWave(30-300 GHz)DemandHigher data rates in communication Higher resolution in imaging and sensingSolutionHigher operation frequencyChallengeHigh-power transmitters with high efficiencyFocusTransistor level power and efficiency improvementfair weather5G

6、high bands,24-40 GHzAutomotive radars,77-79 GHzNeed for high power and efficiency at mmWave(30-300 GHz)28.1:Importance of GaN for 5G and solid-state mm-Wave Circuits of the Future 2026 IEEE International Solid-State Circuits Conference4 of 25Transmitter/Receiver CircuitDataDSP:Digital PredistortionD