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肖特基二极管具有正向电压(𝑉𝑓)低，开关速度快的特点,但漏电流(𝐼𝑅)大-行业数据

肖特基二极管具有正向电压(𝑉𝑓)低，开关速度快的特点,但漏电流(𝐼𝑅)大
肖特基二极管具有正向电压(𝑉𝑓)低，开关速度快的特点,但漏电流(𝐼𝑅)大
•氧化镓 (Ga₂O₃)： 具有比SiC和GaN更宽的禁带宽度，有望在超高压应用中展现潜力，但目前技术尚不成熟。•金刚石 (Diamond)： 拥有极致的半导体特性（极宽禁带、高热导率、高载流子迁移率），被认为是下一代功率半导体的理想材料之一，但面临制造工艺和成本等巨大挑战。
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肖特基二极管具有正向电压(𝑉𝑓)低，开关速度快的特点,但漏电流(𝐼𝑅)大_第1页
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肖特基二极管具有正向电压(𝑉𝑓)低，开关速度快的特点,但漏电流(𝐼𝑅)大_第2页
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肖特基二极管具有正向电压(𝑉𝑓)低，开关速度快的特点,但漏电流(𝐼𝑅)大_第3页
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肖特基二极管具有正向电压(𝑉𝑓)低，开关速度快的特点,但漏电流(𝐼𝑅)大_第4页
肖特基二极管具有正向电压(𝑉𝑓)低，开关速度快的特点,但漏电流(𝐼𝑅)大_第5页
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所属报告： 电子行业功率半导体黄金赛道：技术迭代×能源革命×国产替代的三重奏-250528（39页）.pdf
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