2020中国晶圆制造半导体设备行业发展现状趋势市场产业研究报告（29页）.docx

1、2020 年深度行业分析研究报告1.32.42.1. 42.2.+. 52.3. 53.73.1. 73.2.14nm202058% . 93.3.28nm. 123.4.643/128. 134.1N144.1. 144.2. 154.3. 224.4. 244.5. 244.6. 254.7. ATESOC264.8. STI274.9. 281.3-4246,8002016/20171 14nmFinFET2019 2019Q41%12nm 202031.602 28nm14nm 2020201991255nm 3642019Q32020 645/20215/64128420199DRA

2、M10nm8Gb DDR4120214nm 011N2017-202014%25%PVD17%CVD2%CMP14%22%3%01128 1N1387500067%17%10%6%2.2.1.2050AMD20708019872090PC21DRAMPCDRAM 9011950s1960s1970s1980s1990s20PC)/5G/AI/IoTMPU)DRAMASIC&DRAMSOC)20142.2.16/14nm2020 20%2030 20251220157020251002030150202514nm 920141,387 5000 2.3.2016/20173-4 246,800

3、1 3. 3.1.10nm-7nm-5nm5GAIIC28nm-14nm-10nm7nm-5nm-3nm7nm-5nm-3nm 20187nm20205nm 7nm2019 7nm355nm2019 20203nm 202063nm105nm201945nm20205nm 20205nm3nm GAAFET3nm2021 GAAFinFET FinFET5nm3nm35% 50%30%20213nm 20223nm 14nm/12nm FinFET22nmFD-SOI2019 12nm FD-SOI16nm FinFET12nm10nm FinFET7nm5nm 3nm14nm/12nm Fi

4、nFET12nmFD-SOI 12nm FD-SOI Intel201910nm10nm7nmIntel Intel intel20217nm 202220237nm+5nm2021 EUVDRAM DRAM2020DDR5 10nm16GB32GB14nmFinFET 1.320192019619A1420201420040%(14nm202014nm%)14FinFET 143.5 6000 3.5FinFET202014nm12nm202012nm14nm 28nm14nm 2020 14nm 2019 91255nm 12NANDDRAM 3D NAND 240 30642019 96

5、1282020QL644128C 3D NAND20205/5/12820216412810620202020199DRAM1210nm8Gb DDR42020DDR4LPDDR4 DRAM DDR5LPDDR5GDDR6 28nm/14nm7nm/5nm23.2.140.35m2014128nm0.18m 200128 28nm2015314nm FinFET1819112020 2014 202016 14nm 192177nm14nm FinFET12nm FinFET 220010.18m 2012Q328nm 28nm 2013.940nm 2014.128nm 2015.314nm

6、 FinFET 2017.3CEO177nm 14nm FinFET 2018Q22018Q428nm HKC+28nm HKC 14nm FinFET 12nm FinFET %0.2 14nm FinFET %0.3 28nm 2019Q112nm FinFET 2019Q2FinFET N+1 14nm 14nm FinFET 2019.1114nm FinFET 2020Q114nm FinFET 2020Q2A14nm 2018 8447,7502019448,500300mm300mm830 32018Q12018Q22018Q32018Q42019Q12019Q22019Q320